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Location: Home > Catalogs > Independent > RF FET > High-frequency silicon devices
Number:  RA30H1317M-101
Part Number:  RA30H1317M
Manufacturers:  Mitsubishi Electric
Description:  VHF 50-300MHz/Low output power H2S
Datasheet: 
Availability Status:   MP
Max. ratings VDSS(V):   17 V(max)
f(MHz):   135.0(min)~175.0(max)
Vdd(V):   12.5 V
Pin(W):   0.05 W
Po(W):   30 W(min)
nd(%):   40%
Package / Case:   H2S
weight:   Unknow
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23.65
 
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