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Location: Home > Catalogs > Independent > RF FET > High-frequency silicon devices
Number:  RA18H1213G-101
Part Number:  RA18H1213G
Manufacturers:  Mitsubishi Electric
Description:  800MHz Wave band H2S
Datasheet: 
Availability Status:   MP
Max. ratings VDSS(V):   17 V(max)
f(MHz):   1240.0(min)~1300.0(max)
Vdd(V):   12.5 V
Pin(W):   0.2 W
Po(W):   18 W(min)
nd(%):   20%
Package / Case:   H2S
weight:   Unknow
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11.81
 
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