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Location: Home > Catalogs > Independent > RF FET > GaAs High-frequency silicon devices
Number:  TGI1314-25L/ST
Part Number:  TGI1314-25L
Manufacturers:  Toshiba
Description:  X-,Ku-Band Internally Matched Power GaAs FETs/GaN HEMTs 13.75~14.5(GHz) 7-AA07A
Datasheet: 
Product Type:   X-,Ku-Band Internally Matched Power GaAs FETs/GaN
Availability Status:   Mass production parts
Output Power at 1dB Gain Compression(dBm):   44
Po(dBm):   -
Linear Power Gain(dB):   8(min)
3rd Order IM Distortion(dBc):   -25(min)
Power Added Efficiency(%):   29
Noise Figure (dB):   -
Associated Gain (dB):   0.8(max)
Frequency (GHz):   13.75~14.5(GHz)
Drain-Source Voltage(V) :   24V
Drain Current(A) :   1A
Inverter cir thermal resistance:   -
Supplier Device Package:   7-AA07A
weight:   Unknow
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