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Location: Home > Catalogs > Independent > RF FET > GaAs High-frequency silicon devices
Number:  MGFC42V5258/ST
Part Number:  MGFC42V5258
Manufacturers:  Mitsubishi Electric
Description:  C Band Internally Matched Power GaAs FETs 5.2~5.8(GHz) GF-18
Datasheet: 
Product Type:   GaAs High Frequency Devices
Availability Status:   Mass production parts
Output Power at 1dB Gain Compression(dBm):   41.5(min) 42.5(typ)
Po(dBm):   -
Linear Power Gain(dB):   8.0(min)
3rd Order IM Distortion(dBc):   -
Power Added Efficiency(%):   31
Noise Figure (dB):   -
Associated Gain (dB):   -
Frequency (GHz):   5.2~5.8(GHz)
Drain-Source Voltage(V) :   10
Drain Current(A) :   4.5
Inverter cir thermal resistance:   -
Supplier Device Package:   GF-18
weight:   Unknow
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337.30
 
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